Abstract
A theoretical calculation is presented of the duration of the first phase of the switching process from forward to reverse direction for a diode with a finite base, allowing for the finite surface-recombination velocity at the back contact at high injection levels. Formulas are obtained suitable for practical calculation of minority-carrier lifetime and surface recombination rate for junction diodes.
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References
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Gaman, V.I., Zaidman, S.A. Transients in semiconductor diodes at high injection levels. Soviet Physics Journal 9, 95–97 (1966). https://doi.org/10.1007/BF00818191
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DOI: https://doi.org/10.1007/BF00818191