Conclusions
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1.
The catalytic effect of metal oxides on the process of boronizing has to do with the semiconductor properties of these oxides. The electron-hole conduction of metal oxides improves the electron interchange between reagents, accelerating oxidation of boton carbide and the boronizing process.
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2.
Acceleration of saturation with boron based on the oxygen activation ions with lower valency is caused predominantly by oxides that are p-type semiconductors in which the disordered structure and the proportion of electron-hole conduction are determined by the partial pressure of oxygen in the system.
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3.
The application of the tenets of the electron theory of heterogeneous catalysis of chemical processes to semiconductors together with thermodynamic analysis of redox reactions is an effective direction of searching for optimal activators for currentless boronizing and possibly also for other methods of TCT.
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Additional information
Scientific and Production Association ”RostNIITM.” Translated from Metallovedenie i Termicheskaya Obrabotka Metallov, No. 9, pp. 36–39, September, 1991.
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Polyakov, B.N. Role of semiconductor phenomena in boronizing. Met Sci Heat Treat 33, 708–712 (1991). https://doi.org/10.1007/BF00811738
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DOI: https://doi.org/10.1007/BF00811738