Conclusions
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1.
A spectroscopic study was made of the reactions of several metals (Al, Cu, Ni, Co, Ti, Mo, W, and Kh18N9T steel) with silicon dioxide in the as-deposited condition and after annealing in the temperature range 600–1500°C.
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2.
In the contact reaction of SiO2 films with metallic surfaces up to the maximum temperatures of existence of these films, no individual metallic oxides or similar chemical compounds (such as olivines) are formed.
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3.
The temperature limits of stability of SiO2 films applied to various metallic substrates have been established. The most stable systems, remaining unchanged right up to 1450°C, are Mo-SiO2 and W-SiO2.
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4.
The reaction in metal-SiO2 film systems at temperatures below the film stability limits is limited to a polarizing action of the metallic substrate, which manifests itself in the appearance of additional absorption bands in the ranges 1320–1260 and 520–500 cm−1.
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Translated from Poroshkovaya Metallurgiya, No. 6 (114), pp. 71–75, June, 1972.
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Karpinos, D.M., Listovnichaya, S.P. & Aivazov, V.Y. Spectroscopic investigation of the reaction of oxides with metallic surfaces. Powder Metall Met Ceram 11, 484–487 (1972). https://doi.org/10.1007/BF00797926
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DOI: https://doi.org/10.1007/BF00797926