Conclusions
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1.
Ta in MoSe2 acts as an acceptor impurity, and alloying with it sharply increases the electrical conductivity of the compound.
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2.
At x=0.12 · 10−2, the compound Mo1−xTaxSe2 is a nondegenerate semiconductor; compounds with x≥ 0.56 · 10−2 must be classed as semimetals.
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3.
The effective masses of charge carriers in Mo1−xTaxSe2 alloys are close to m0. This indicates that holes generated as a result of alloying with tantalum are located in the valency zone (Fig. 1b).
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Translated from Poroshkovaya Metallurgiya, No. 11 (131), pp. 75–79, November, 1973.
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Kalikhman, V.L., Kasiyan, I.M. & Mikhailyuk, I.P. Mechanism of the electrical conductivity of quasibinary MoSe2-TaSe2 (Mo1−xTaxSe2) alloys. Powder Metall Met Ceram 12, 922–925 (1973). https://doi.org/10.1007/BF00794632
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DOI: https://doi.org/10.1007/BF00794632