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Annealing behavior of Ar ion irradiated Bi2Sr2Can-1CunO4+2n superlattice and intergrowth films

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Abstract

Artificially layered Bi2Sr2Can−1CunO4+n films were synthesized by sequential sputter deposition of BiO, SrCu0.5O1.5 and CaCuO2 layers. Annealing behavior of these films which were irradiated by Ar ions was studied. Defect assisted improvement of their crystalline perfection is expected which might results in the improvement of the superconducting properties of these films. An artificial film, such as an intergrowth of 2223 and 2234 phases, and superstructure films of (2245)1(2201)1 and (2234)1(2212)1, were irradiated by Ar ions (150 keV, 2−10×1012 ions/cm2) and annealed at 730 °C. An improvement of superconducting transition temperatures were observed.

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Authors and Affiliations

  1. National Research Institute for Metals, Sengen, 305, Tsukuba, Japan

    T. Hatano, M. Kaise, K. Saito, K. Nakamura, C. S. Kim & Y. K. Cho

  2. Korea Research Institute of Standards and Science, 305-606, Taejon, Korea

    C. S. Kim & Y. K. Cho

Authors
  1. T. Hatano
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  2. M. Kaise
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  3. K. Saito
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  4. K. Nakamura
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  5. C. S. Kim
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  6. Y. K. Cho
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Hatano, T., Kaise, M., Saito, K. et al. Annealing behavior of Ar ion irradiated Bi2Sr2Can-1CunO4+2n superlattice and intergrowth films. J Low Temp Phys 105, 1295–1300 (1996). https://doi.org/10.1007/BF00753879

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  • DOI: https://doi.org/10.1007/BF00753879

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