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Defects and laser action in GaAs diodes

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Abstract

Zn-diffused, Te-doped GaAs injection lasers were examined by means of infrared microscopy, etching, transmission electron microscopy and scanning electron probe microanalysis.

Bands of high infrared absorption, i.e., striations, were present in many diodes and the lines of intersection of the striations with the p-n junction were minimum emission filaments. Misfit dislocation networks were present in the p-n junction region but did not influence the emission pattern. Precipitates and diffusion-induced dislocations were found in the zinc-diffused region. All the properties of the material that enter into the expression for the threshold current for laser action were considered. It was concluded that the striations affect laser emission patterns mainly through the variation of the infra-red absorption coefficient.

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Authors and Affiliations

  1. Department of Metallurgy, Imperial College, SW7, London, UK

    M. J. Hill & D. B. Holt

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  1. M. J. Hill
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  2. D. B. Holt
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Hill, M.J., Holt, D.B. Defects and laser action in GaAs diodes. J Mater Sci 3, 244–258 (1968). https://doi.org/10.1007/BF00741957

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