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Vertical-cavity surface-emitting laser fabricated by two implantations using tungsten wires as mask

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Abstract

The design and fabrication of a room-temperature continuous wave (cw) vertical-cavity surface-emitting laser is reported. The device was fabricated by two deep H+ implantations using parallel tungsten wires as the resist mask. The direction of the mask in the first implantation is perpendicular to that in the second. The fabrication process is the simplest ever reported for vertical-cavity surface-emitting laser fabrication. A lowest threshold current of 17 mA and a maximum light output power of 4 mW were obtained.

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Authors and Affiliations

  1. Department of Electronic Engineering, Jilin University, 123 Jiefang Road, 130023, Changchun, P.R. China

    Ying Liu, Guotong Du, Zhiling Wang, Xiuying Jiang, Xuemei Li, Jungeng Song, Xiaobo Zhang & Dingsan Gao

  2. State Key Laboratory on Integrated Optoelectronics, Jilin University, 123 Jiefang Road, 130023, Changchun, P.R. China

    Ying Liu, Guotong Du, Zhiling Wang, Xiuying Jiang, Xuemei Li, Jungeng Song, Xiaobo Zhang & Dingsan Gao

Authors
  1. Ying Liu
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  2. Guotong Du
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  3. Zhiling Wang
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  4. Xiuying Jiang
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  5. Xuemei Li
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  6. Jungeng Song
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  7. Xiaobo Zhang
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  8. Dingsan Gao
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Liu, Y., Du, G., Wang, Z. et al. Vertical-cavity surface-emitting laser fabricated by two implantations using tungsten wires as mask. Opt Quant Electron 28, 1781–1785 (1996). https://doi.org/10.1007/BF00698544

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  • DOI: https://doi.org/10.1007/BF00698544

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