Capacitance voltage characteristics of sol-gel derived lead titanate thin films on a silicon substrate

Abstract

Sol-gel derived PbTiO₃ films were prepared on silicon wafers. Triply coated films were uniform with about 0.4 µm thickness, and were crystallized to isotropic perovskite structure on heat treating. Large voids were formed in the silicon near the interface between PbTiO₃ and silicon on heat treating at 500 °C for 12 h. Microstructures of nitric acid catalysed films were better than those of uncatalysed ones. The dielectric constants of the films ranged from 20–46. The flat band voltage of catalysed films annealed at 500 and 600 °C for 1 h were more negatively shifted with reference to films heat treated at 215 °C for 5 min, than uncatalysed ones.