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Interfacial reactions between palladium thin films and InP

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Abstract

Palladium appears to be an important component in ohmic contact metallizations to III–V semiconductors. Very little is known about its interaction with InP. Consequently, the reaction between a thin layer of Pd (≃100 nm) and an InP substrate has been studied at annealing temperatures ranging from 250–450 °C for up to 30 sec, i.e., typical annealing conditions encountered during contact fabrication. Palladium reacts readily with InP, initially forming an amorphous ternary phase, which transforms to crystalline Pd2InP on annealing. Pd2InP has an ordered cubic structure, with a lattice parameter of 0.830 nm, and grows epitaxially on InP. Microtwins, 2–3 atomic layers thick, have been identified in the ternary phase and these form along the (110) and (\(\bar 1\)10) planes.

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References

  1. R. BRUCE, D. CLARK and S. EICHER,Journal of Elec. Mater. 19 (1990) 209.

    Google Scholar 

  2. R. C. BROOKS, C. L. CHEN, A. CHU, L. J. MAHONEY, J. G. MAVROIDES, M. J. MANFRA and M. C. FINN,IEEE Elec. Device Lett. EDL-6 (1985) 525.

    Google Scholar 

  3. T. SANDS, V. G. KERAMIDAS, R. GRONSKY and J. WASHBURN,Thin Solid Films 136 (1985) 105.

    Google Scholar 

  4. A. KOBAYASHI, T. SAKURAI, T. HASMIZUME and T. SAKATA,J. Appl. Phys. 59 (1986) 3448.

    Google Scholar 

  5. T. SANDS, V. G. KERAMIDAS, A. J. YU, K.-M. YU, R. GRONSKY and J. WASHBURN,J. Mater. Res. 2 (1987) 262.

    Google Scholar 

  6. J.-C. LIN, K.-C. HSIEH, J. SCHULZ and Y. A. CHANG, Ibid.3 (1988) 148.

    Google Scholar 

  7. K. M. KRISHNAN, T. SANDS and R'SUE CARON, in “Proceedings of the 45th Annual Meeting of the Electron Microscopy Society of America”, edited by G. W. Bailey (San Francisco Press, 1987) p. 330.

  8. R. CARON-POPOWICH, J. WASHBURN, T. SANDS and A. S. KAPLAN,J. Appl. Phys. 64 (1988) 4909.

    Google Scholar 

  9. D. G. IVEY and P. JIAN,Mater. Lett. 8 (1989) 389.

    Google Scholar 

  10. D. G. IVEY and G. R. PIERCY,J. Elec. Microsc. Tech. 8 (1988) 233.

    Google Scholar 

  11. D. G. IVEY, R. BRUCE and G. R. PIERCY,Solid State Elec. 31 (1988) 1251.

    Google Scholar 

  12. T. SANDS, C. C. CHANG, A. S. KAPLAN and V. G. KERAMIDAS,Appl. Phys. Lett. 19 (1987) 1346.

    Google Scholar 

  13. D. G. IVEY, P. JIAN and R. BRUCE,Thin Solid Films, in press.

  14. F. Y. SHIAU and Y. A. CHANG,Appl. Phys. Lett. 55 (1989) 1510.

    Google Scholar 

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Authors and Affiliations

  1. Department of Mining, Metallurgical and Petroleum Engineering, University of Alberta, T6G 2G6, Edmonton, Alberta, Canada

    D. G. Ivey, L. Zhang & P. Jian

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  1. D. G. Ivey
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  2. L. Zhang
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  3. P. Jian
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Ivey, D.G., Zhang, L. & Jian, P. Interfacial reactions between palladium thin films and InP. J Mater Sci: Mater Electron 2, 21–27 (1991). https://doi.org/10.1007/BF00695000

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  • DOI: https://doi.org/10.1007/BF00695000

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