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Spectral holeburning properties ofR′ color centers in LiF: dependence on doping and irradiation processes

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Abstract

The effects of doping and radiation-damage processes on the persistent spectral hole burning properties ofR′ color centers in LiF were studied using current tuned GaAlAs diode-laser derivative spectroscopy. Dopants used were Mg, Ni and Co and irradiation was done by x-rays and neutrons. The holes were alwys burned near the center of the zerophonon line. In most cases the experimentally determined hole lineshapes including side holes could be satisfactorily fit by a phenomenological lineshape model with three adjustable parameters. The amplitudes of the side holes relative to the main hole were found to increase with increasing radiation damage.

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Author notes

  1. C. Ortiz

    Present address: IBM Almaden Research Center, 650 Harry Road, 95120-6099, San Jose, CA, USA

  2. M. Gehrtz (IBM World Trade Visiting Scientist)

    Present address: The Institut für Physikalische Chemie der Universität München, F.R. Germany

Authors and Affiliations

  1. Instituto de Optica, 121 Serrano, Madrid, Spain

    C. Ortiz & C. N. Afonso

  2. IBM Almaden Research Center, 650 Harry Road, 95120-6099, San Jose, CA, USA

    M. Gehrtz (IBM World Trade Visiting Scientist), F. M. Schellenberg & G. C. Bjorklund

  3. Stevens Institute of Technology, 07030, Hoboken, NJ, USA

    E. A. Whittaker

Authors
  1. C. Ortiz
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  2. C. N. Afonso
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  3. M. Gehrtz
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  4. F. M. Schellenberg
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  5. G. C. Bjorklund
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  6. E. A. Whittaker
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Ortiz, C., Afonso, C.N., Gehrtz, M. et al. Spectral holeburning properties ofR′ color centers in LiF: dependence on doping and irradiation processes. Appl. Phys. B 41, 197–203 (1986). https://doi.org/10.1007/BF00693923

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  • DOI: https://doi.org/10.1007/BF00693923

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