Abstract
We have fabricated Nb3Ge microbridges, including those with variablethickness geometry, with submicrometer lengths, by means of plasma etching combined with lithographic techniques. The measuredI-V characteristic and the temperature variation of the critical current are consistent with that expected from the vortex concept. However, a deviation is observed in the microwave steps: the magnitude of the critical current oscillates with microwave power in a manner which agrees with an analog simulation based on the RSJ model. We have found a strong correlation between the bridge behavior and the film parametersT c and ρ n (normal resistivity). The critical current is reduced rapidly with a decrease inT c and an increase in ρ n , while in high-T c and low-ρ n bridges a linearI-V characteristic appears at low voltages. Taking into account the influence of pinning, we discuss the results in terms of vortex motion.
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Kuriki, S., Yoshida, A. & Konishi, H. Vortex behavior in Nb3Ge microbridges. J Low Temp Phys 51, 149–163 (1983). https://doi.org/10.1007/BF00683419
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DOI: https://doi.org/10.1007/BF00683419