Abstract
Results concerning V3Si films produced by a simple annealed multilayer technique are reported together with X-ray diffraction patterns, Auger spectroscopy, and Rutherford backscattering analysis. Low-temperature electrical resistivity measurements are discussed. It is found that the V3Si films exhibit aT 2 dependence in the temperature rangeT c ≤T≤23 K and aT 2.6 dependence in the rangeT c ≤T≤40 K. The normal-state resistivity in the whole temperature range (T c ≤T≤600 K) is analyzed in the framework of Cote-Meisel theory. Consistent values of the saturation resistivity ρ m and of the Debye temperature are obtained by fitting the experimental data with the Cote-Meisel expression for ρ(T).
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Di Chiara, A., Scotti di Uccio, U., Senatore, M. et al. Temperature dependence of resistivity for thermally diffused V3Si multilayer films. J Low Temp Phys 62, 385–396 (1986). https://doi.org/10.1007/BF00683403
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DOI: https://doi.org/10.1007/BF00683403