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Simulation of Josephson junction in a microwave field

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Abstract

The resistively shunted junction (RSJ) model of a Josephson junction in a microwave field is studied using both analog and digital simulators. A comparison of the two methods shows very good agreement. Voltage-current characteristics of the Josephson junction in the low-frequency limit and their transition to chaotic behavior due to the punchthrough effect are investigated. The inverse ac effect on high-β c junctions is simulated. Fractional inverse steps are found.

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Authors and Affiliations

  1. Institute of Physics, Czechoslovak Academy of Sciences, Řež, Czechoslovakia

    J. Kuzník & M. Odehnal

  2. Friedrich-Schiller University, Jena, German Democratic Republic

    P. Seidel

Authors
  1. J. Kuzník
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  2. M. Odehnal
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  3. P. Seidel
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Kuzník, J., Odehnal, M. & Seidel, P. Simulation of Josephson junction in a microwave field. J Low Temp Phys 72, 391–406 (1988). https://doi.org/10.1007/BF00682150

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  • DOI: https://doi.org/10.1007/BF00682150

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