Abstract
Oxygen transport during oxide growth on (110), (111), and (100) Al crystals at 550°C is investigated by18O/SIMS combined with kinetic measurements and SEM and TEM observations. Starting with an electropolished surface, the experimental evidence suggests oxide growth by oxygen anion transport via local pathways through an outer amorphous Al2O3 layer and oxygen incorporation at the periphery of the underlying laterally growing γ-Al2O3 islands. The kinetics, island morphology and epitaxy are sensitive to substrate orientation. This oxide growth behavior is compared with oxide formation on a sputter-cleaned and annealed (111) Al surface.
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Eldridge, J.I., Hussey, R.J., Mitchell, D.F. et al. Thermal oxidation of single-crystal aluminum at 550°C. Oxid Met 30, 301–328 (1988). https://doi.org/10.1007/BF00659003
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DOI: https://doi.org/10.1007/BF00659003