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Journal of Low Temperature Physics

, Volume 45, Issue 3–4, pp 287–294 | Cite as

Preparation and analysis of high-T c Nb-Ge films

  • Lin Li
  • Bai-ru Zhao
  • Ping Zhou
  • Shou-quan Guo
  • You-xiang Zhao
Article

Abstract

The dependence of Tc on sputtering conditions, chemical composition, and phase structure for Nb-Ge films has been studied. It was found that Tc varied with composition, but was not dependent on exact stoichiometry of the film; the Nb/Ge ratio was <3 for very high Tc ∼23 K films and ∼4 for films with Tc ∼20 K. X-ray results showed that the films with Tc ∼23 K contained a certain amount of tetragonal Nb5Ge3 with a lattice parameter of A15 phase ∼5.14 Å. The depth profile of very high Tc films showed no increase of oxygen concentration at the film-substrate interface; no correlation of high Tc and impurities was found.

Keywords

Oxygen Oxygen Concentration Magnetic Material Phase Structure Depth Profile 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1981

Authors and Affiliations

  • Lin Li
    • 1
  • Bai-ru Zhao
    • 1
  • Ping Zhou
    • 1
  • Shou-quan Guo
    • 1
  • You-xiang Zhao
    • 1
  1. 1.Institute of PhysicsChinese Academy of SciencesBeijingChina

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