Journal of Low Temperature Physics

, Volume 45, Issue 3–4, pp 287–294 | Cite as

Preparation and analysis of high-T c Nb-Ge films

  • Lin Li
  • Bai-ru Zhao
  • Ping Zhou
  • Shou-quan Guo
  • You-xiang Zhao


The dependence of Tc on sputtering conditions, chemical composition, and phase structure for Nb-Ge films has been studied. It was found that Tc varied with composition, but was not dependent on exact stoichiometry of the film; the Nb/Ge ratio was <3 for very high Tc ∼23 K films and ∼4 for films with Tc ∼20 K. X-ray results showed that the films with Tc ∼23 K contained a certain amount of tetragonal Nb5Ge3 with a lattice parameter of A15 phase ∼5.14 Å. The depth profile of very high Tc films showed no increase of oxygen concentration at the film-substrate interface; no correlation of high Tc and impurities was found.


Oxygen Oxygen Concentration Magnetic Material Phase Structure Depth Profile 
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Copyright information

© Plenum Publishing Corporation 1981

Authors and Affiliations

  • Lin Li
    • 1
  • Bai-ru Zhao
    • 1
  • Ping Zhou
    • 1
  • Shou-quan Guo
    • 1
  • You-xiang Zhao
    • 1
  1. 1.Institute of PhysicsChinese Academy of SciencesBeijingChina

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