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Preparation and analysis of high-T c Nb-Ge films

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Abstract

The dependence of Tc on sputtering conditions, chemical composition, and phase structure for Nb-Ge films has been studied. It was found that Tc varied with composition, but was not dependent on exact stoichiometry of the film; the Nb/Ge ratio was <3 for very high Tc ∼23 K films and ∼4 for films with Tc ∼20 K. X-ray results showed that the films with Tc ∼23 K contained a certain amount of tetragonal Nb5Ge3 with a lattice parameter of A15 phase ∼5.14 Å. The depth profile of very high Tc films showed no increase of oxygen concentration at the film-substrate interface; no correlation of high Tc and impurities was found.

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Authors and Affiliations

  1. Institute of Physics, Chinese Academy of Sciences, Beijing, China

    Lin Li, Bai-ru Zhao, Ping Zhou, Shou-quan Guo & You-xiang Zhao

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  1. Lin Li
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  2. Bai-ru Zhao
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  3. Ping Zhou
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  4. Shou-quan Guo
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  5. You-xiang Zhao
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Li, L., Zhao, Br., Zhou, P. et al. Preparation and analysis of high-T c Nb-Ge films. J Low Temp Phys 45, 287–294 (1981). https://doi.org/10.1007/BF00655135

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  • DOI: https://doi.org/10.1007/BF00655135

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