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Solid-phase reactions between (100) GaAs and thin-film refractory metals (Ti, Zr, V, Nb, Cr, Mo, and W)

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Abstract

Recently, there has been an increased interest in the applications of refractory metals as gate materials for the self aligned gate process in the fabrications of GaAs field effect transistors. In this study, we systematically investigated the thermally induced interface interactions between (100) GaAs substrates and thin films of refractory metals (Ti, Zr, V, Nb, Cr, Mo, and W). Depth profilings of the M/GaAs interfaces were obtained using conventional and heavy ion Rutherford backscattering spectrometry. Phase identifications were achieved by x-ray diffraction.

Results on the phase formation sequence, reaction kinetics, the distribution, composition and structure of the reacted phases and the interface reactivity of these contacts will be presented. Correlations between metal properties (electronegativity and metal-metal bond strength) and kinetics of the reactions (activation energy and reactivity of the interfaces) will also be discussed.

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Authors and Affiliations

  1. Center for Advanced Materials and Engineering Division, Lawrence Berkeley Laboratory, University of California, 94720, Berkeley, CA, USA

    K. M. Yu, J. M. Jaklevic & E. E. Haller

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  1. K. M. Yu
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  2. J. M. Jaklevic
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  3. E. E. Haller
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Yu, K.M., Jaklevic, J.M. & Haller, E.E. Solid-phase reactions between (100) GaAs and thin-film refractory metals (Ti, Zr, V, Nb, Cr, Mo, and W). Appl. Phys. A 44, 177–190 (1987). https://doi.org/10.1007/BF00626421

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  • DOI: https://doi.org/10.1007/BF00626421

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