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Theory of the double heterostructure laser: II. Waveguide model incorporating carrier concentration-dependent refractive index

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Abstract

Solutions to charge transport equations are used to illustrate the variation of the active region refractive index of the double-heterostructure GaAs laser. It is shown that a marked asymmetry can arise in the refractive index. In this paper, a suitable waveguide theory is developed to take account of this effect. The necessity for such a waveguide theory is demonstrated by comparing threshold current densities and far-field patterns calculated with this model to those calculated using a simpler waveguide model.

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Author notes

  1. K. A. Shore

    Present address: Computer Unit, UWIST, CF1 3NU, Cardiff, UK

Authors and Affiliations

  1. Department of Applied Mathematics and Astronomy, University College, P.O. Box 78, Cardiff, UK

    K. A. Shore

  2. Department of Electronics, University of Southampton, SO9 5NH, Southampton, UK

    M. J. Adams

Authors
  1. K. A. Shore
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  2. M. J. Adams
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Shore, K.A., Adams, M.J. Theory of the double heterostructure laser: II. Waveguide model incorporating carrier concentration-dependent refractive index. Opt Quant Electron 8, 373–381 (1976). https://doi.org/10.1007/BF00624828

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  • DOI: https://doi.org/10.1007/BF00624828

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