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Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs

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Abstract

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs reach-through avalanche photodiodes (RAPD). The temperature coefficient of avalanche breakdown voltage in a depletion region is studied. The response time of a reach-through APD in these materials is also discussed. Finally a comparison of the characteristics between PIN APD and RAPD is presented. The theoretical data have also been substantiated experimentally by Kanedaet al.

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Authors and Affiliations

  1. Research Institute of Electronics and Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China

    Y. K. Su, C. Y. Chang, T. S. Wu & B. D. Liu

Authors
  1. Y. K. Su
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  2. C. Y. Chang
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  3. T. S. Wu
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  4. B. D. Liu
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Supported by National Science Council, the Republic of China

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Su, Y.K., Chang, C.Y., Wu, T.S. et al. Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs. Opt Quant Electron 11, 377–384 (1979). https://doi.org/10.1007/BF00619819

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  • DOI: https://doi.org/10.1007/BF00619819

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