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Generation of far-infrared radiation by hot holes in germanium and silicon inE ⊥H fields

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Abstract

The experimental results obtained by the investigation of stimulated FIR emission from dopedp-type germanium andp-type silicon by hot holes in crossedE andH fields atТ = 10 and 80 K are reported. The analysis of the emission intensity fromp-type germanium as a function ofE andH fields permits us to draw a conclusion about the important role of quantization of the energy spectrum of light holes and the contribution of light hole transitions with Δn = 2 to the amplification of FIR radiation. A new region of generation is demonstrated inp-type germanium under uniaxial stress. The first experimental results on stimulated FIR emission fromp-type silicon are reported.

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References

  1. L. E. Vorobjev, F. I. Osokin, V. I. Stafeev andV. N. Tulupenko,Pis'ma Zh. Eks. Teor. Fiz. 35 (1982) 360.

    Google Scholar 

  2. Idem, JETP Lett. 35 (1982) 440.

    Google Scholar 

  3. J. K. Pozela, E. V. Starikov, P. N. Shiktorov, L. E. Vorobjev, F. I. Osokin andV. I. Stafeev,Physica B + C 117/118 (1983) 226.

    Google Scholar 

  4. A. A. Andronov, I. V. Zverev, V. A. Kozlov, J. N. Nozdrin andV. N. Shastin,Pis'ma Zh. Eks. Teor. Fiz. 40 (1984) 69.

    Google Scholar 

  5. Idem, JETP Lett. 40(1984) 804.

    Google Scholar 

  6. S. Komiyama, N. Iizuka andY. Akasaka,Appl. Phys. Lett. 47 (1985) 358.

    Google Scholar 

  7. M. Helm, K. Unterrainer, E. Gornik andE. E. Haller, Proceedings of the 5th International Conference on Hot Carriers in Semiconductors (Boston, 1987).

  8. L. E. Vorobjev, S. N. Danilov andV. I. Stafeev,Fiz. Tekh. Poluprovodn. 21 (1987) 1271.

    Google Scholar 

  9. Idem, Sov. Phys. Semicond. 21 (1987) 770.

    Google Scholar 

  10. A. A. Andronov et al., Physica B134 (1985) 210.

    Google Scholar 

  11. J. K. Pozela, E. V. Starikov andP. N. Shiktorov, in ‘Inverted Distributions of Hot Electrons in Semiconductors’ (Gorky, 1983) (in Russian).

  12. J. K. Pozela, E. V. Starikov andP. N. Shiktorov, unpublished.

  13. L. E. Vorobjev, S. N. Danilov andV. I. Stafeev, paper in this issue.

  14. J. K. Pozela, E. V. Starikov andP. N. Shiktorov,Litov. Fiz. Sb. 25 (1985) 7.

    Google Scholar 

  15. Idem, Sov. Phys. —Collection 25 (4) (1985) 1.

    Google Scholar 

  16. J. K. Pozela, E. V. Starikov andP. N. Shiktorov,Phys. Stat. Sol. (b)128 (1985) 653.

    Google Scholar 

  17. J. A. Mitjagin, V. N. Murzin, S. A. Stoklizkiy andI. E. Trofimov,Pis'ma Zh. Eks. Teor. Fiz. 46 (1987) 116.

    Google Scholar 

  18. A. V. Muravjev, J. N. Nozdrin andV. N. Shastin,Pis'ma Zh. Eks. Teor. Fiz. 48 (1988) 241.

    Google Scholar 

  19. V. A. Kozlov, L. S. Mazov andI. M. Nefedov,Pis'ma Zh. Eks. Teor. Fiz. 37 (1983) 142.

    Google Scholar 

  20. M. I. Djakonov andV. I. Perel,Zh. Eks. Teor. Fiz. 92 (1987) 350.

    Google Scholar 

  21. R. P. Seisjan, Al. L. Efros andT. V. Yazeva,Pis'ma Zh. Tekh. Fiz. 12 (1986) 369.

    Google Scholar 

  22. S. Komiyama, Proceedings of the 17th International Conference on the Physics of Semiconductors (Stockholm, 1986).

  23. S. Komiyama andS. Kuroda,Phys. Rev. B38 (1988) 1274.

    Google Scholar 

  24. E. V. Starikov andP. N. Shiktorov, unpublished.

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Authors and Affiliations

  1. Leningrad State Technical University, Politekhnicheskaya 29, 195251, Leningrad, USSR

    L. E. Vorobjev, S. N. Danilov & V. I. Stafeev

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  1. L. E. Vorobjev
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  2. S. N. Danilov
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  3. V. I. Stafeev
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Vorobjev, L.E., Danilov, S.N. & Stafeev, V.I. Generation of far-infrared radiation by hot holes in germanium and silicon inE ⊥H fields. Opt Quant Electron 23, S221–S229 (1991). https://doi.org/10.1007/BF00619769

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  • DOI: https://doi.org/10.1007/BF00619769

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