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Analysis of closely-spaced index-guided semiconductor laser. I. Multistripe devices

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Abstract

A detailed analysis of triple-stripe lasers incorporating index guides is presented. The relevance of multistripe laser structures for a number of applications is noted and progress in constructing these devices is briefly discussed. The properties of triple-stripe lasers are calculated as a function of stripe width and stripe separation. Light-current characteristics, near-fields and carrier concentration profiles are found for a range of devices and under differing operating conditions.

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Author notes

  1. K. A. Shore

    Present address: School of Electrical Engineering, University of Bath, BA2 7AY, Claverton Down, Bath, UK

Authors and Affiliations

  1. Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, PO Box 147, L69 3BX, Liverpool, UK

    K. A. Shore

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  1. K. A. Shore
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Shore, K.A. Analysis of closely-spaced index-guided semiconductor laser. I. Multistripe devices. Opt Quant Electron 16, 235–242 (1984). https://doi.org/10.1007/BF00619378

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  • DOI: https://doi.org/10.1007/BF00619378

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