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Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels

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Abstract

The construction of a semiconductor laser with a stripe waveguide is proposed, the geometry of which can make it possible to obtain radiation similar to that of a phase-locked laser array. The requirements for the parameters of the laser quasi-array and the technological feasibility of the proposed approach are discussed.

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Funding

The author A.S. Payusov was supported by the Russian Science Foundation, project no. 17-72-10060.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    N. Yu. Gordeev & A. S. Payusov

  2. St. Petersburg Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    M. V. Maximov

Authors
  1. N. Yu. Gordeev
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  2. A. S. Payusov
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  3. M. V. Maximov
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Correspondence to N. Yu. Gordeev.

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The authors declare that they have no conflict of interest.

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Translated by V. Bukhanov

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Gordeev, N.Y., Payusov, A.S. & Maximov, M.V. Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels. Semiconductors 53, 1405–1408 (2019). https://doi.org/10.1134/S1063782619100087

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  • DOI: https://doi.org/10.1134/S1063782619100087

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