Abstract
The paper reports photoluminescence studies on two defects, All at 0.836 eV and Al2 at 0.886 eV, created by aluminum complexing in irradiated silicon after thermal annealing at around 300 °C. The optical data include perturbation spectroscopy (uniaxial stress and magnetic field) revealing rhombic I (Al1) or monoclinic I (Al2) site symmetry of the defects. For Al a carbon isotope shift in the no-phonon line is detected. These and other data are discussed in conjunction with Ga- or B-related defects exhibiting similar optical features.
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Irion, E., Bürger, N., Kürner, W. et al. Photoluminescence study of acceptor-carbon complexes in irradiated silicon: Aluminum-related defects. Appl. Phys. A 48, 25–30 (1989). https://doi.org/10.1007/BF00617760
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DOI: https://doi.org/10.1007/BF00617760