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Carbon doping-induced defect centers in anodized alumina with enhanced optically stimulated luminescence

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Abstract

Anodized aluminum oxide (AAO) in amorphous form is shown to be a prospective phosphor for optically stimulated luminescence (OSL) by implanting 50 keV carbon ions at a fluence of 1 × 1016 ions/cm2 at room temperature. An almost 20-fold enhancement in continuous wave OSL (CW-OSL) sensitivity is obtained in carbon-doped AAO (C:AAO) by exposing to beta radiation, while an almost linear increase in CW-OSL intensity is recorded with increasing dose from 0.3 to 5 Gy. However, cathodoluminescence (CL) suggests an upsurge of oxygen vacancies, especially F+ and F22+ centers, at the cost of F center-related defects in C:AAO. Detailed X-ray photoelectron spectroscopy (XPS) analysis further reveals that the implanted carbon atoms can act as cationic impurities in AAO and stabilize the nearby F+ centers via substitution of Al3+ by C2+. The combined CL and XPS results are also shown to be capable of illustrating the CW-OSL response. This study would, therefore, be a benchmark for understanding the role of carbon in the substitutional sites of AAO for generating OSL active electron traps.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

The authors would like to acknowledge the financial support received from the Shiv Nadar University and DAE-BRNS, India under the project No. 34/14/24/2016-BRNS/34365. Mrs. K. D. Devi from IUAC, New Delhi is highly acknowledged for her kind help during ion implantation. The authors, especially SB and SP, would also acknowledge the active participation of Mr. D. Dey, SINP India during CL measurements.

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Author notes

  1. S. Pal

    Present address: Technical Research Centre, S. N. Bose National Centre for Basic Sciences, JD Block, Sector III, Salt Lake City, Kolkata-700106, India

Authors and Affiliations

  1. Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh, 201314, India

    S. Bhowmick, S. Pal & Aloke Kanjilal

  2. Radiological Physics & Advisory Division, Bhabha Atomic Research Centre, Mumbai, 400085, India

    A. Singh, D. R. Mishra & A. K. Bakshi

  3. Homi Bhabha National Institute, Anushaktinagar, Mumbai, 400094, India

    A. Singh, D. R. Mishra & A. K. Bakshi

  4. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067, India

    S. A. Khan

  5. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh, 452001, India

    R. J. Choudhary & D. M. Phase

  6. Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata, 700064, India

    T. K. Chini

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Bhowmick, S., Pal, S., Singh, A. et al. Carbon doping-induced defect centers in anodized alumina with enhanced optically stimulated luminescence. J Mater Sci: Mater Electron 32, 10635–10643 (2021). https://doi.org/10.1007/s10854-021-05719-7

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