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Formation of palladium silicide by rapid thermal annealing

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Abstract

The formation of palladium silicide Pd2Si by rapid thermal annealing of Pd layers on silicon has been studied as a function of annealing time (1–60s) in the temperature range 350–500 °C. It is shown that the results found for conventional furnace annealing (long duration, low temperature) can be extrapolated for rapid thermal annealing (shorter time, higher temperature) when taking into account the exact time dependence of the short temperature cycle. The growth rate is essentially diffusion limited and the activation energy is close to 1.1±0.1 eV. Silicide resistivity of about 30–40 Ω cm was obtained for 200–400 nm thick Pd2Si layers formed at 400 °C for a few seconds.

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Authors and Affiliations

  1. Groupe PHASE, Centre de Recherches Nucleaires, 23, Rue du Loess, F-67037, Strasbourg-Cedex, France

    D. Levy, A. Grob, J. J. Grob & J. P. Ponpon

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  1. D. Levy
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  2. A. Grob
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  3. J. J. Grob
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  4. J. P. Ponpon
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Levy, D., Grob, A., Grob, J.J. et al. Formation of palladium silicide by rapid thermal annealing. Appl. Phys. A 35, 141–144 (1984). https://doi.org/10.1007/BF00616966

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  • DOI: https://doi.org/10.1007/BF00616966

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