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Ion mixing and thermochemical properties of markers in Cu

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Abstract

Markers of Nb, Ru, Ag, In, Sb, Hf, Pt, Au, and Bi in Cu were mixed by irradiation with 750 keV Kr at 77 K and analyzed in situ by backscattering of 1.9 MeV He+. Cu with Pt and Au markers were also irradiated and analyzed at 7 K. The results were identical to those obtained at 77 K results. The measured mixing efficienciesDt/øF D , for the various markers correlate with their respective impurity tracer diffusivities and impurity-vacancy binding energies in Cu. The correlation suggests that diffusion by a vacancy mechanism during a thermal spike as an important process in ion mixing of marker atoms in Cu.

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Authors and Affiliations

  1. Electrical Engineering, California Institute of Technology, 91125, Pasadena, CA, USA

    S. -J. Kim & M. -A. Nicolet

  2. Materials Science and Technology Division, Argonne National Laboratory, 60439, Argonne, IL, USA

    R. S. Averback

Authors
  1. S. -J. Kim
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  2. M. -A. Nicolet
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  3. R. S. Averback
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Kim, S.J., Nicolet, M.A. & Averback, R.S. Ion mixing and thermochemical properties of markers in Cu. Appl. Phys. A 41, 171–174 (1986). https://doi.org/10.1007/BF00616835

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  • DOI: https://doi.org/10.1007/BF00616835

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