Abstract
We developed a method for the determination of the minority carrier diffusion coefficient by means of the capacitance-voltage characteristics of a Schottky barrier. Capacitance-voltage-frequency characteristics were measured at room temperature and liquid nitrogen temperature. We adapted the diffusion capacitance concept ofp-n junction for the metal/semiconductor rectifier contact. We determined the minority carrier diffusion coefficient as 47–61 cm2/s.
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N. Serin: Doga Bilim Dergisi7, 221–228 (1983)
D.L. Scharfetter: Solid State Electron.8, 299–311 (1965)
A.Y.C. Yu, H. Snow: Solid State Electron.12, 155–160 (1969)
M.A. Green, J. Shewchun: Solid State Electron.16, 1141–1150 (1973)
N. Serin: Disseration, Department of Physics Science, Faculty of Ankara University (1977)
N. Serin: J. Techn. Phys.24/1, 121–125 (1983)
N. Serin: Doga Bilim Dergisi6/2, 47–52 (1982)
M. Neuberger: Germanium Bibliographic Supplement DS-143 (1966) and Germanium Data Sheets (1965) pp. 105–143
S.M. Sze:Physics of Semiconductor Devices (Wiley, New York 1969) pp. 107–108
A.M. Goodman: J. Appl. Phys.34, 329–338 (1962)
J.D. Wiley, C.L. Miller: JEEE Trans. ED-22, 265–272 (1975)
F.S. Goucher: Phys. Rev.81, 475–476 (1951)
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Serin, N. Determination of minority carrier diffusion coefficient from capacitance-voltage characteristics of Au/Ge-Schottky barriers. Appl. Phys. A 36, 209–212 (1985). https://doi.org/10.1007/BF00616554
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DOI: https://doi.org/10.1007/BF00616554