Abstract
A theoretical analysis of and experimental observations on a parallel incident laser-induced deposition rate are reported. Our theory predicts that the maximum deposition rate depends on the photo-traveling length, the scattering cross section of the reactant gases and their partial pressure. This result is applied to SiO2 deposition using monosilane and nitrous oxide for reactant gases, and is compared with experimental results. We show that the deposition rate of SiO2 films as a function of the incident light power and the partial pressure of reactant gases predicted by the present theory well explains our experimental results. A supply-limitation phenomenon of the reactant gases and a method of estimating deposition efficiencies are also discussed.
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Tate, A., Jinguji, K., Yamada, T. et al. Theoretical and experimental investigations on the deposition rate and processes of parallel incident laser-induced CVD. Appl. Phys. A 38, 221–226 (1985). https://doi.org/10.1007/BF00616500
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DOI: https://doi.org/10.1007/BF00616500