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Threshold switching effects in AgTlSe2 and CuTlSe2 films

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Abstract

Switching effects in AgTlSe2 and CuTlSe2 chalcopyrite semiconductors films have been investigated. The threshold switching voltage was found to increase linearly with the thickness, moreoverV th increases exponentially with the temperature. The rapid transition between the highly resistive and conductive states was attributed to an electrothermal origin from Joule's heating of a current channel.

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Authors and Affiliations

  1. Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

    M. A. Afifi & H. H. A. Labib

  2. Physics Department, Faculty of Science, Al Azhar University (Girls branch), Cairo, Egypt

    A. H. Abou El Ela & K. A. Sharaf

Authors
  1. M. A. Afifi
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  2. H. H. A. Labib
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  3. A. H. Abou El Ela
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  4. K. A. Sharaf
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Afifi, M.A., Labib, H.H.A., Abou El Ela, A.H. et al. Threshold switching effects in AgTlSe2 and CuTlSe2 films. Appl. Phys. A 46, 113–117 (1988). https://doi.org/10.1007/BF00615918

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  • DOI: https://doi.org/10.1007/BF00615918

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