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Plasma — Processed obliquely deposited Bi-Ge-Se and Ag/Bi-Ge-Se films as resist materials

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Abstract

Lithographic properties of photoexposed Bi10Ge20Se70 and Ag/Bi10Ge20Se70 films and hydrogen plasma exposed Ag/Bi10Ge20Se70 films have been investigated. The asdeposited films show a positive resist behavior on exposure to photons and the silver overlayered films show a negative resisti behavior on exposure to both photons and hydrogen plasme. The contrast values are 1.25 and 2.3 for photoexposed positive and negative resists, respectively, and 5.0 for plasma-exposed negative resist. The sensitivity is ∼1020 photons/cm2 for the photoexposed positive and negative resists and 1018 ions/cm2 (0.11 C/cm2) for the plasma-exposed negative resist.

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Author notes

  1. P. K. Gupta

    Present address: Thin Film Group, IDDC, Staff Road, P.O. Box 35, 133001, Ambala Cantt., India

  2. K. L. Chopra (Director)

    Present address: Indian Institute of Technology, 721302, Kharagpur, India

Authors and Affiliations

  1. Thin Film and Solid State Technology Laboratory, Department of Physics, Indian Institute of Technology, 110016, New Delhi, India

    P. K. Gupta & K. L. Chopra (Director)

Authors
  1. P. K. Gupta
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  2. K. L. Chopra
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Gupta, P.K., Chopra, K.L. Plasma — Processed obliquely deposited Bi-Ge-Se and Ag/Bi-Ge-Se films as resist materials. Appl. Phys. A 46, 103–106 (1988). https://doi.org/10.1007/BF00615916

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  • DOI: https://doi.org/10.1007/BF00615916

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