Abstract
Infrared spectra of nitrogen doped Czochralski-grown silicon indicate absorption lines in addition to the well-known lines of local modes of oxygen, carbon and nitrogen centers. The most prominent lines of them can be shown to be correlated with certain oxygen and nitrogen concentrations. These lines are, therefore, thought to arise from N-O complexes and are discussed in the context of an O-induced disturbance of N2-pair vibrations. The results of preliminary investigations on the stability of such complexes are also reported.
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