Abstract
Conditions are discussed under which an interstitial atom absorbed in the core of a gliding 60° dislocation belonging to the glide set can be transformed into an antisite defect. The mechanism considered may be responsible for an increase in the concentration of AsGa defects observed in GaAs single crystals after their plastic deformation.
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Figielski, T. Formation of antisite defects by gliding dislocations in sphalerite-structure crystals. Appl. Phys. A 29, 199–200 (1982). https://doi.org/10.1007/BF00615067
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DOI: https://doi.org/10.1007/BF00615067