Abstract
Recent investigations on transition-metal impurities in silicon emphasizing the effect of the combined diffusion of two transition metals are presented and briefly discussed. The electronic properties and basic thermal kinetics are analysed by DLTS. The conversion of a Pd-related multivalent defect atE c-0.35 eV andE c-0.57 eV to the Pd-related defect atE c −0.22 eV is observed, and a Pd-Fe complex level atE c −0.32 eV is identified. The annealing characteristics of the multivalent Rh levels atE c-0.33 eV andE c-0.57 eV are observed, and used to analyse the influence of prior Rh doping on the Au diffusion. A complex formed by the codiffusion of Au and Cu is observed atE v+0.32eV andE v+0.42 eV, and shown to exhibit bistable behavior as does a similarly produced Au-Ni complex observed atE v + 0.35 eV andE v+0.48 eV.
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