Abstract
Germanium films have been rf sputter deposited on a variety of substrates. A new techniques has been developed to control doping concentrations of the films at predetermined levels for bothp-type as well asn-type films. The hole concentrations of these films could be varied from 1015 to 2×1018/cm3 while the electron concentrations could be varied from 1015 to 5×1017/cm3 using this technique. Transmission electron microscope studies have been made to study the crystalline quality of the films.
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