Abstract
The structural and optical properties of thin Ge films deposited onto semiconducting and insulating substrates and modified by pulsed laser radiation are studied. The films are deposited by the sputtering of a Ge target with a low-energy Xe+ ion beam. Crystallization of the films is conducted by their exposure to nanosecond ruby laser radiation pulses (λ = 0.694 μm) with the energy density W = 0.2−1.4 J cm−2. During pulsed laser treatment, the irradiated area is probed with quasi-cw (quasi-continuous-wave) laser radiation (λ = 0.532 and 1.064 μm), with the reflectance recorded R(t). Experimental data on the lifetime of the Ge melt are compared with the results of calculation, and good agreement between them is demonstrated. Through the use of a number of techniques, the dependences of the composition of the films, their crystal structure, the level of strains, and the reflectance and transmittance on the conditions of deposition and annealing are established.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. Liu, L. C. Kimerling, and J. Michel, Semicond. Sci. Technol. 27, 094006 (2012).
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, Appl. Phys. Lett. 95, 011911 (2009).
M. Kaschel, M. Schmid, M. Gollhofer, J. Werner, M. Oehme, and J. Schulze, Solid State Electron. 83, 87 (2013).
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, Opt. Lett. 35, 679 (2010).
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, Opt. Express 20, 11316 (2012).
H. A. Novikov, R. I. Batalov, R. M. Bayazitov, I. A. Faizrakhmanov, G. D. Ivlev, and S. L. Prokop’ev, Zh. Tekh. Fiz. 60 (3), 406 (2015).
A. A. Samarskii, The Theory of Differential Schemes (Nauka, Moscow, 1989; Marcel Dekker, New York, 2001), ch. 7, p. 378.
V. A. Gurtov and R. N. Osaulenko, Solid State Physics for Engineers (Tekhnosfera, Moscow, 2007), ch. 6, p. 11 [in Russian].
W. Szyszko, F. Vega, and C. N. Afonso, Appl. Phys. A 61, 141 (1995).
J. R. Meyer, M. R. Kruer, and F. J. Bartoli, J. Appl. Phys. 51, 5513 (1980).
W. Yeh, H. Chen, H. Huang, C. Hsiao, and J. Jeng, Appl. Phys. Lett. 93, 094103 (2008).
K. N. Galkin, R. I. Batalov, R. M. Bayazitov, H. A. Novikov, V. A. Shustov, D. A. Bizyaev, P. I. Gaiduk, G. D. Ivlev, and S. L. Prokopyev, Phys. Status Solidi C 10, 1824 (2013).
V. A. Volodin, A. I. Yakimov, A. V. Dvurechenskii, M. D. Efremov, A. I. Nikiforov, E. I. Gatskevich, G. D. Ivlev, and G. Yu. Mikhalev, Semiconductors 40, 202 (2006).
S. H. Huang, X. Y. Ma, X. J. Wang, and F. Lu, Nanotechnology 14, 25 (2003).
A. F. Abd Rahim,_M. R. Hashim, N. K. Ali, A. M. Hashim, M. Rusop, and M. H. Abdullah, Microelectron. Eng. 126, 134 (2014).
Y.-Y. Fang, J. Tolle, R. Roucka, A. V. G. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menendez, Appl. Phys. Lett. 90, 061915 (2007).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © H.A. Novikov, R.I. Batalov, R.M. Bayazitov, I.A. Faizrakhmanov, N.M. Lyadov, V.A. Shustov, K.N. Galkin, N.G. Galkin, I.M. Chernev, G.D. Ivlev, S.L. Prokop’ev, P.I. Gaiduk, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 6, pp. 746–752.
Rights and permissions
About this article
Cite this article
Novikov, H.A., Batalov, R.I., Bayazitov, R.M. et al. Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties. Semiconductors 49, 729–735 (2015). https://doi.org/10.1134/S1063782615060160
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782615060160