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High-temperature oxidation of SiC in a glow-discharge oxygen plasma

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Abstract

The oxidation kinetics and structure of the oxide scales formed on high-density SiC were studied in molecular oxygen at 740 Torr and in a glow-discharge oxygen plasma at 0.1 Torr at temperatures of 1000, 1100, and 1200°C. The monatomic oxygen formed by the glow discharge markedly increased the reaction rate and the vaporization of some of the oxidation products. The marked differences in kinetics suggest that the rate-controlling step during oxidation in molecular oxygen is the dissociation of adsorbed diatomic oxygen to the monatomic species. Films formed in molecular oxygen were mostly amorphous SiO2 with small inclusions of SiC and graphite, whereas films formed in dissociated oxygen were primarily amorphous SiO2 containing SiO, S2O3, and the coesite form of SiO2.

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Authors and Affiliations

  1. Materials Research Institute of the Academy of Sciences of the Ukrainian SSR, Kiev, USSR

    V. A. Lavrenko, A. P. Pomytkin & E. S. Lugovskaya

Authors
  1. V. A. Lavrenko
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  2. A. P. Pomytkin
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  3. E. S. Lugovskaya
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Lavrenko, V.A., Pomytkin, A.P. & Lugovskaya, E.S. High-temperature oxidation of SiC in a glow-discharge oxygen plasma. Oxid Met 10, 97–103 (1976). https://doi.org/10.1007/BF00614239

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  • DOI: https://doi.org/10.1007/BF00614239

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