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On some aspects of low-temperature and anodic oxidation of metals and semiconductors

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Abstract

Recent ideas of Fehlner and Mott on low-temperature oxidation, both thermal and anodic, are examined with regard to the magnitudes of metal-metal and metal-oxygen bond strengths and their involvment in the interpretations of oxidation behavior of metals and semiconductors. It is pointed out that the magnitudes of bond strengths used by them appear to be inconsistent with the estimates of other workers based on well-established procedures. Some possible consequences of the reevaluated M-M and M-O bond strengths as regards the oxidation characteristics of metals are briefly mentioned. Also discussed is the influence of the estimated semiconductivity of anodization oxides on the subsequent anodic behavior of these metals.

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Authors and Affiliations

  1. Hydro-Quebec Institute of Research, Varennes, P.Q., Canada

    Ashok K. Vijh

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  1. Ashok K. Vijh
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Based on an invited lecture in the symposium, Bonding and Structure in Inorganic Solids as Related to Ionic Mobility, held at St. Catherine's College, Oxford University, September 15–17, 1971.

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Vijh, A.K. On some aspects of low-temperature and anodic oxidation of metals and semiconductors. Oxid Met 4, 63–71 (1972). https://doi.org/10.1007/BF00612161

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  • DOI: https://doi.org/10.1007/BF00612161

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