In situ oxidation studies on (001) copper-nickel alloy thin films

Abstract

The (001)-oriented, single crystalline thin films of Cu-3% Ni, Cu-4.6% Ni, and Cu-50% Ni alloy were prepared by vapor deposition onto (001) NaCl substrates. The films were subsequently annealed at around 1100°K and oxidized at 725°K at an oxygen partial pressure of 5×10⁻¹ N · m⁻² (5× 10⁻⁶ atm). High-resolution transmission electron microscopy was employed to observe the changes in situ. For all the alloy concentrations Cu₂O and NiO were observed to nucleate and grow independently; no mixed oxides were noted. The shape and growth rates of Cu₂O nuclei were similar to those found in previous work on pure copper films. For low-nickel alloy concentrations the NiO nuclei were larger and the number density of NiO was less when compared to the oxidation of pure nickel films. For the Cu-50% Ni films the shape and growth rates of NiO were identical to those for the oxidation of pure nickel films. Low nickel concentrations exhibited a reduced induction period for Cu₂O when compared to pure copper films. Cu-50%Ni films showed surface precipitation and growth of NiO first, followed by Cu₂O in a typical through -thickness growth after a prolonged induction period. The results are consistent with the previously established oxidation mechanisms of pure copper and pure nickel films.