Abstract
The kinetics of the silicon/hydrogen low-pressure discharge system have been measured using a flow technique and mass spectrometry. Results show that at long residence times the system operates under a partial chemical equilibrium even though it is not at thermodynamic equilibrium. The present work indicates that the decisive parameter controlling the structural properties of the deposit (i.e., the formation of either amorphous or microcrystalline silicon) is the departure of the system from the partial chemical equilibrium.
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Wagner, J.J., Vepřek, S. Kinetic study of the heterogeneous Si/H system under low-pressure plasma conditions by means of mass spectrometry. Plasma Chem Plasma Process 2, 95–107 (1982). https://doi.org/10.1007/BF00566860
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DOI: https://doi.org/10.1007/BF00566860