Abstract
GaAs/GaAIAs high-power window stripe lasers have been developed with a uniform active layer in the region adjacent to the device facets and with a curved active layer in the central region. A single-step liquid-phase epitaxy growth is used in the fabrication process to form two internal lateral current paths, so allowing for a very simple fabrication process. The optical coupling between the two stimulation emission regions reduces the beam divergence. The steady-state analysis of such a laser structure, including heating effects, agrees well with experimental results.
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Zhang, X., Wang, W., Zhao, F. et al. Channelled substrate window twin stripe GaAs/GaAIAs visible lasers: fabrication and steady-state analysis. Opt Quant Electron 27, 141–154 (1995). https://doi.org/10.1007/BF00563219
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DOI: https://doi.org/10.1007/BF00563219