Abstract
A study has been made of electrophysical properties and deep traps in epitaxial n-GaAs grown by the chloride method and irradiated by electrons in the temperature range (20–500)°C. It is shown that the “natural” conductivity of GaAs is attained at irradiation temperatures of 20°C due to the introduction of E traps, and for 300°C≤Tirr≤500°C of high-temperature P traps, presumably defect clusters.
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Additional information
V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 57–60, October, 1992.
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Brudnyi, V.N., Vilisova, M.D. & Porokhovnichenko, L.P. Conductivity compensation and deep traps in epitaxial n-GaAs irradiated by electrons. Russ Phys J 35, 939–942 (1992). https://doi.org/10.1007/BF00559889
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DOI: https://doi.org/10.1007/BF00559889