Abstract
Graphical dependences allowing the static-factor parameters to be found from the angular distance between the maxima on the reflection curve are obtained on the basis of the model of a crystal with constant strain gradient in the kinematic approximation of x-ray diffraction theory. X-ray diffraction and theoretical data for the static factor are given for film samples of the solid solution InGaP/(111)GaAs and an autoepitaxial Si/(111) film with boron diffusion.
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References
Yu. P. Khapachev and F. N. Chukhovskii, Kristallografiya,34, No. 3, 776–801 (1989).
V. V. Lider, F. N. Chukhovskii, Yu. P. Khapachev, and M. N. Barashev, Fiz. Tverd. Tela,31, No. 4, 74–81 (1989).
V. V. Lider and Yu. P. Khapachev, in: 2nd Conference on Dynamic X-Ray Scattering in Crystals with Dynamic and Static Distortion: Abstracts of Proceedings [in Russian], Kiev (1990), p. 99.
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Kabardino-Balkarsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 52–54, June, 1993.
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Lider, V.V., Khapachev, Y.P. & Dyshekov, A.A. Determining the static factor in films with a strain gradient by an x-ray diffraction method. Russ Phys J 36, 552–554 (1993). https://doi.org/10.1007/BF00559451
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DOI: https://doi.org/10.1007/BF00559451