Abstract
For the semiconducting compounds A2B4C2 5 (A2-Cd and Zn; B4-Sn and Ge; C5-As and P) complex thermodynamical evaluations are carried out of technologically important parameters. Using models of multicomponent simple and regular solutions, liquidus temperatures are determined near the point of the triple compound, equilibrium partial pressures are computed of pairs of components,a priori evaluations are carried out of thermodynamical parameters of characteristic structural defects and, starting from the analysis of processes of defect-formation in the semiconductors under consideration, their homogeneous regions are evaluated.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 40–51, October, 1993.
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Voevodin, V.G., Voevodina, O.V. Thermodynamical foundations of the technology of the semiconducting compounds A2B4C2 5 . Russ Phys J 36, 924–934 (1993). https://doi.org/10.1007/BF00559156
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DOI: https://doi.org/10.1007/BF00559156