Etching of MgO crystals in acids: kinetics and mechanism of dissolution

Abstract

Kinetics of etching of MgO crystals have been studied in H₂SO₄, HNO₃ and HCl. The effects of etching time, acid concentration and temperature on the growth of hillocks, on the selective etch rate and on the rate of overall dissolution are demonstrated. It is observed that etch rates are independent of time, but are determined by the temperature and concentration of the acid. The etch rate-concentration curves show maxima which are characteristic of an acid. The values of activation energy for the processes of dissolution, selective etching and hillock growth and the corresponding frequency factors are computed. It is established that the process of dissolution in concentrated H₂SO₄ is diffusion controlled, while in H₂SO₄ with concentrations below 18 N and in HNO₃ and HCl it is reaction rate controlled. The pre-exponential factor is found to be a function of acid concentration. The results are discussed from the standpoint of chemistry. A comment on the data published on MgO by previous workers is made.