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Mass spectrometric studies of impurities in gallium arsenide crystals

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Abstract

Techniques for the investigation of impurities in gallium arsenide crystals using mass spectrometry are described. The results obtained show a fair correlation with electrical measurements. Flat-bottomed etch pits are found which can be correlated with the oxygen content.

The use of silica, boron nitride, alumina, and vitreous carbon crucibles is shown to contaminate the crystals. For crystals grown from silica crucibles, the silicon content decreases rapidly with increasing arsenic pressure during growth. From the distribution of impurities along the lengths of crystals, a number of distribution coefficients have been estimated.

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Authors and Affiliations

  1. Mullard Research Laboratories, Redhill, Surrey, UK

    J. C. Brice, J. A. Roberts & G. Smith

Authors
  1. J. C. Brice
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  2. J. A. Roberts
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  3. G. Smith
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Brice, J.C., Roberts, J.A. & Smith, G. Mass spectrometric studies of impurities in gallium arsenide crystals. J Mater Sci 2, 131–138 (1967). https://doi.org/10.1007/BF00549572

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  • DOI: https://doi.org/10.1007/BF00549572

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