Abstract
Results on electrical resistivity and thermal conductivity measured in the temperature range 4.2–40 K are presented for single-crystal and polycrystalline samples of Cd3As2. Hall effect has been studied at temperatures of 4.2, 77, and 300 K. The calculated value of the conduction electron concentration was in the range 1.87–1.95 1024m−3. Electrical resistivity of all investigated samples was independent of temperature up to about 10K and increased slowsly at higher temperatures. The thermal conductivity shows a maximum in the region in which the lattice component of thermal conductivity dominates. The strong anisotropy of the lattice component determines the anisotropy of the total thermal conductivity. The electronic component of thermal conductivity does not exhibit any anisotropy and shows a maximum at a temperature of about 300 K.
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Paper submitted to the Ninth Symposium on Thermophysical Properties, June 24–27, 1985, Boulder, Colorado, U.S.A.
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Bartkowski, K., Rafalowicz, J. & Zdanowicz, W. Thermal conductivity and electrical resistivity of cadmium arsenide (Cd3As2) in the temperature range 4.2–40 K. Int J Thermophys 7, 765–772 (1986). https://doi.org/10.1007/BF00503834
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DOI: https://doi.org/10.1007/BF00503834