Abstract
The change of the refractive index due to quantum well (QW) disordering is calculated for light propagating normal to the Al0.3Ga0.7As/GaAs QW layers (i.e. along the QW growth direction). A hyperbolic function is used to model the above QW confinement profile after disordering, i.e. thermal interdiffusion of trivalent atoms across the well-barrier interfaces. The refractive index difference (Δn) is evaluated for two cases, where case I refers to the difference between a partially disordered QW and a more extensively disordered QW, while case II refers to the difference between an as-grown QW and a partially disordered QW. The results demonstrate that good photon confinement (large Δn > 0) can be achieved for both cases, where Δn increases with increasing QW width and decreases with annealing time for case I while for case II it increases with annealing time. In comparing the two cases, a shorter annealing time is required to achieve the same value of Δn if the case II structures are used. The change of refractive index obtained here demonstrates a larger value of Δn than that produced by the variation of the concentration of free carriers in the bulk material.
Similar content being viewed by others
References
J. WERNER, E. KAPON, N. G. STOFFEL, E. COLAS, S. A. SCHWARTZ, C. L. SCHWARTZ and N. ANDREADAKIS, Appl. Phys. Lett. 55 (1989) 540.
F. JULIEN, P. S. SWANSON, M. A. EMANUEL, D. G. DEPPE, T. A. DeTEMPLE, J. J. COLEMAN and N. HOLONYAK Jr, Appl. Phys. Lett. 50 (1987) 866.
M. KUMAR, J. T. BOYD, H. E. JACKSON and B. L. WEISS, IEEE J. Quantum Electron. QE 28 (1992) 1678.
G. J. SONEK, J. M. BALLANTYNE, Y. J. CHEN, G. M. CARTER, S. W. BROWN, E. S. KOTELES and J. P. SALERNO, IEEE J. Quantum Electron. QE 22 (1986) 1015.
K. B. KAHEN and J. P. LEBURTON, Appl. Phys. Lett. 49 (1986) 734.
B. J. SEALY, Semicond. Sci. Technol. 3 (1988) 448.
T. E. SCHLESINGER and T. KUECH, Appl. Phys. Lett. 49 (1986) 519.
K. KASH, B. TELL, P. GRABBE, E. A. DOBISZ, H. G. GRAIGHEAD and M. C. TAMARGO, J. Appl. Phys. 63 (1988) 190.
C. VIEU, M. SCHNEIDER, R. PLANEL, H. LAUNOIS, B. DESCOUTS and Y. GAO, J. Appl. Phys. 70 (1991) 1433.
B. L. WEISS, I. BRADLEY, N. J. WHITEHEAD and J. S. ROBERTS, J. Appl. Phys. 71 (1992) 5715.
D. G. Deppe and N. Holonyak, Jr., J. Appl. Phys. 64 (1988) R93.
J. H. Marsh, S. I. Hansen, A. C. Bryce and R. M. DeLaRue, Opt. Quantum Electron. 23 (1991) S941.
A. T. MENEY, Superlatt. Microstruct. 11 (1992) 47.
E. KAPON, N. G. STOFFEL, E. A. DOBISZ and R. BHAT, Appl. Phys. Lett. 52 (1988) 351.
Y. SUZUKI, H. IWAMURA and O. MIKAMI, Appl. Phys. Lett. 56 (1990) 19.
O. WADA, A. FURUYA and M. MAKIUCHI, IEEE Photon. Technol. Lett. 1 (1989) 16.
K. IGA, F. KOYAMA and S. KINOSHITA, IEEE J. Quantum Electron. QW 24 (1988) 1845.
R. S. GEELS, S. W. CORZINE, J. W. SCOTT, D. B. YOUNG and L. A. COLDREN, IEEE Photon. Technol. Lett. 2 (1990) 234.
T. KADOKORO, H. OKAMOTO, Y. KOHAMA, T. KAWAKAMI and T. KUROKAWA, IEEE Photon. Technol. Lett. 4 (1992) 409.
M. Ghisoni, G. Parry, M. Pate, G. Hill and J. Roberts, Jpn J. Appl. Phys. 30 (1991) L1018.
K. K. LAW, J. L. MERZ and L. A. COLDREN, J. Appl. Phys. 72 (1992) 855.
E. H. LI and B. L. WEISS, J. Appl. Phys. 70 (1991) 1054.
E. H. LI and B. L. WEISS, IEEE J. Quantum Electron. 29 (1993) 311.
J. D. RALSTON, S. O'BRIEN, G. W. WICKS and L. F. EASTMAN, Appl. Phys. Lett. 52 (1988) 1511.
E. H. LI, B. L. WEISS and K. S. CHAN, Phys. Rev. B 46 (1992) 15181.
K. P. HOMEWOOD and D. J. DUNSTAN, J. Appl. Phys. 69 (1991) 7581.
K. B. KAHEN and J. P. LEBURTON, Phys. Rev. 33 (1986) 5465.
F. BASSANI and G. P. PARRAVICINI, in Electronic States and Optical Transitions in Solids (Pergamon Press, Oxford, 1975) p. 154.
S. L. CHUANG and D. AHN, J. Appl. Phys. 65 (1989) 2822.
D. AHN and S. L. CHUANG, J. Appl. Phys. 64 (1988) 440.
M. ASADA, IEEE J. Quantum Electron. QE 25 (1989) 2019.
R. A. SMITH, in Wave Mechanics of Crystalline Solids (Academic Press, New York, 1961) p. 240.
H. C. CASEY Jr. and M. B. PANISH, in Heterostructure Lasers, Part A (Academic Press, New York, 1978) p. 146.
R. H. YAN, S. W. CORZINE, L. A. COLDREN and I. SUEMUNE, IEEE J. Quantum Electron. QE 26 (1990) 213.
S. C. HONG, G. P. KOTHIYAL, N. DEBBAR, P. BATTACHARYA and J. SINGH, Phys. Rev. B 37 (1988) 878.
F. STERN, Solid St. Phys. 15 (1963) 300.
K. B. KAHEN and J. P. LEBURTON, Phys. Rev. B 32 (1985) 5177.
Y. C. CHANG, J. CHEUNG, A. CHIOU and M. KHOSHNEVISAN, J. Appl. Phys. 68 (1990) 4233.
R. PIESSENS, M.VANROY-BRANDERS and I. MERTENS, Angewandte Informatik, 18 (1976) 31.
M. A. MENTZER, R. G. HUNSPERGER, S. SRIRAM, J. BARTKO, M. S. WLODAWSKI, J. M. ZAVADA and H. A. FENKINSON, Opt. Eng. 24 (1985) 225.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Li, E.H., Weiss, B.L. & Micallef, J. The effect of interdiffusion on the change of refractive index of an AlGaAs/GaAs quantum well structure. Opt Quant Electron 25, 399–408 (1993). https://doi.org/10.1007/BF00420581
Received:
Revised:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00420581