Abstract
We discuss the factors which affect the characteristic junction parameter m, which is obtained from the intercept of the / (dV/dl) vs / characteristic. The relation between m and the reliability of InGaAsP/InP BH laser devices is also discussed.
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Jiawei, S., Enshun, J., Hongyan, L. et al. The characteristic junction parameter of a semiconductor laser and its relation with reliability. Opt Quant Electron 28, 647–651 (1996). https://doi.org/10.1007/BF00411299
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DOI: https://doi.org/10.1007/BF00411299