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Accurate dependences of spontaneous emission factor, lifetime, and photon lifetime on threshold current

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Abstract

Using the rate equation, several optical methods of characterizing the threshold of a laser diode (LD) were analyzed. The thresholds determined by all methods are consistent if the spontaneous-emission-coefficient (β) is small. If β<0.05, the thresholds obtained by different methods are different. Especially, for micro-nano LDs with a large β, these methods are starting to become inaccurate. However, the d S/dH is a relatively accurate method to characterize threshold of these LDs compared to other methods. The effects of the spontaneous-emission-lifetime (τsp) and the photon-lifetime (τp) on thresholds were analyzed. The exact functions between the threshold and the β, τsp and τp were obtained.

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Authors and Affiliations

  1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Applied Physics, Tianjin University, Tianjin, 300072, China

    Kai-ping Jia  (贾凯萍), Liang Zhang  (张亮) & Lie-feng Feng  (冯列峰)

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  1. Kai-ping Jia  (贾凯萍)
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  2. Liang Zhang  (张亮)
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  3. Lie-feng Feng  (冯列峰)
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Corresponding author

Correspondence to Lie-feng Feng  (冯列峰).

Additional information

This work has been supported by the National Natural Science Foundation of China (Nos.61804010, 61874004 and 11204209), and the Natural Science Foundations of Tianjin City (No.17JCYBJC16200).

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Jia, Kp., Zhang, L. & Feng, Lf. Accurate dependences of spontaneous emission factor, lifetime, and photon lifetime on threshold current. Optoelectron. Lett. 16, 103–107 (2020). https://doi.org/10.1007/s11801-020-9087-0

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  • DOI: https://doi.org/10.1007/s11801-020-9087-0

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