Abstract
A systematic study of the effect of annealing treatment in a nitrogen atmosphere on the oxygen and carbon impurities present in solar grade polysilicon has been conducted in the spectral region 4000–400 cm−1 employing infrared spectroscopy. Thermal treatment was provided for 30 min at temperatures varying from 100–1300 °C. Results of the present study are in conformity with the reported annealing results on resistivity and photoconductivity.
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Gupta, D., Awasthy, B. & Varma, S.P. Infrared characterization studies of poly-crystalline silicon annealed in a nitrogen atmosphere. Journal of Materials Science 28, 1488–1490 (1993). https://doi.org/10.1007/BF00363338
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DOI: https://doi.org/10.1007/BF00363338