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Study of growth dislocations in L-arginine phosphate monohydrate single crystals by chemical etching

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Abstract

The results of a study of the distribution of growth dislocations revealed on different faces of L-arginine phosphate monohydrate (LAP) crystals by selective etching in relation to the growth conditions of the crystals are described. It was found that (1) the dislocation density, ϱ, on a face is the highest in its central regions and depends on the supersaturation used for growth, and that (2) ϱ on different faces is different. The observations are discussed from the standpoint of the mechanism of generation of dislocations at the seed-crystal interface in the initial stages of regeneration of the seed and at the crystal-medium interface due to the formation of bunches of growth layers on the growing crystal faces during their development.

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Authors and Affiliations

  1. Department of Physics, Technical University of Lublin, ul. Nadbystrzycka 38, 20-618, Lublin, Poland

    K. Sangwal

  2. Institut de Ciencia dels Materials de Barcelona, CSIC, Campus de la UAB, 08193, Bellaterra, Spain

    S. Veintemillas-Verdaguer

  3. Department d'Enginyeria Quimica, Universitat Politecnica de Catalunya, Colom 1, 08222, Terrassa, Spain

    J. Torrent-Burgués

Authors
  1. K. Sangwal
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  2. S. Veintemillas-Verdaguer
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  3. J. Torrent-Burgués
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Sangwal, K., Veintemillas-Verdaguer, S. & Torrent-Burgués, J. Study of growth dislocations in L-arginine phosphate monohydrate single crystals by chemical etching. JOURNAL OF MATERIALS SCIENCE 31, 6299–6304 (1996). https://doi.org/10.1007/BF00354453

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  • DOI: https://doi.org/10.1007/BF00354453

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